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SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN3320F
ISSUE 3 – DECEMBER 1995
FEATURES
7
* 200 Volt V DS
* R DS(on) = 25 ?
D
S
G
PARTMARKING DETAIL – MU
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T amb =25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T amb =25°C
Operating and Storage Temperature Range
SYMBOL
V DS
I D
I DM
V GS
P tot
T j :T stg
VALUE
200
60
1
± 20
330
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source
BV DSS
200
V
I D =1mA, V GS =0V
Breakdown Voltage
Gate-Source Threshold
V GS(th)
1.0
3.0
V
I D =1mA, V DS = V GS
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
I GSS
I DSS
100
10
50
nA
μ A
μ A
V GS = ± 20V, V DS =0V
V DS =200V, V GS =0V
V DS =160V, V GS =0V,
T=125°C (2)
On-State Drain Current(1)
Static Drain-Source On-State
I D(on)
R DS(on)
250
25
mA
?
V DS =25V, V GS =10V
V GS =10V,I D =100mA
Resistance (1)
Forward Transconductance(1)
g fs
75
mS
V DS =25V,I D =100mA
(2)
Input Capacitance (2)
C iss
45
pF
Common Source
C oss
18
pF
V DS =25V, V GS =0V, f=1MHz
Output Capacitance (2)
Reverse Transfer Capacitance
C rss
5
pF
(2)
Turn-On Delay Time (2)(3)
t d(on)
5
ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t r
t d(off)
t f
7
6
6
ns
ns
ns
V DD ≈ 25V, I D =100mA
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator
3 - 398
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